晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 427/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 30V 55A U8FL |
8,118 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2.2V @ 250µA | 18.2nC @ 10V | ±20V | 1113pF @ 15V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 25V 19A 8PQFN |
2,142 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2.35V @ 25µA | 18nC @ 10V | ±20V | 1667pF @ 10V | - | 2.8W (Ta), 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 38A TO251 |
3,096 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | 28.5nC @ 10V | ±20V | 900pF @ 25V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
4,662 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 14.4A (Ta), 64.8A (Tc) | 5V, 10V | 8.8mOhm @ 10A, 10V | 3V @ 250µA | 15.3nC @ 10V | ±20V | 1088pF @ 20V | - | 2.99W (Ta), 55.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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|
ON Semiconductor |
MOSFET P-CH 40V 10A TP |
6,210 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT-223 |
8,370 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | ±20V | 152.7pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 20V 89A POWERDI3333 |
8,676 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 89A (Tc) | 1.8V, 4.5V | 4mOhm @ 15A, 4.5V | 900mV @ 250µA | 125nC @ 10V | ±10V | 4670pF @ 10V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 89A POWERDI3333 |
7,344 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 89A (Tc) | 1.8V, 4.5V | 4mOhm @ 15A, 4.5V | 900mV @ 250µA | 125nC @ 10V | ±10V | 4670pF @ 10V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 200V 6A TO252 |
6,696 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 1.5A (Ta), 6A (Tc) | 10V | 400mOhm @ 3A, 10V | 3.7V @ 250µA | 115nC @ 10V | ±20V | 328pF @ 100V | - | 2.5W (Ta), 42.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 75V 27A D2PAK |
4,698 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 27A (Tc) | 11V | 50mOhm @ 14A, 11V | 5V @ 2mA | 19nC @ 10V | ±30V | 810pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 18A D2PAK |
3,384 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 1mA | 21nC @ 10V | ±20V | 633pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
4,878 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 980MA SOT223 |
7,308 |
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SIPMOS™ | P-Channel | MOSFET (Metal Oxide) | 100V | 980mA (Tc) | 10V | 900mOhm @ 980mA, 10V | 4V @ 380µA | 12nC @ 10V | ±20V | 319pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 40V 103A |
6,048 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 103A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 3.5V @ 60µA | 23nC @ 10V | ±20V | 1600pF @ 25V | - | 3.2W (Ta), 69W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 600V 6A TO252-3 |
2,232 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 30W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
CONSUMER |
2,376 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 30W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 13A 8TSON-ADV |
8,046 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta) | 6.5V, 10V | 14mOhm @ 6.5A, 10V | 4V @ 200µA | 15nC @ 10V | ±20V | 1300pF @ 30V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Sanken |
MOSFET N-CH 30V 18A 8DFN |
5,904 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 3.8mOhm @ 47.2A, 10V | 2.5V @ 650µA | 38.8nC @ 10V | ±20V | 2460pF @ 15V | - | 3.1W (Ta), 59W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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Sanken |
MOSFET N-CH 75V 26A 8DFN |
5,022 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 7A (Ta), 26A (Tc) | 4.5V, 10V | 14.5mOhm @ 18.9A, 10V | 2.5V @ 650µA | 33nC @ 10V | ±20V | 2520pF @ 25V | - | 3.1W (Ta), 59W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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Sanken |
MOSFET N-CH 100V 5A 8DFN |
7,722 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 5A (Ta) | 4.5V, 10V | 28mOhm @ 14.2A, 10V | 2.5V @ 650µA | 35.8nC @ 10V | ±20V | 2540pF @ 25V | - | 3.1W (Ta), 59W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
T6 40V DPAK EXPANSION AND |
8,352 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 9.8A (Ta), 24A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 2.2V @ 20µA | 9.8nC @ 10V | ±20V | 530pF @ 25V | - | 2.9W (Ta), 18W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 71A U8FL |
3,294 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | ±20V | 1683pF @ 15V | - | 3.1W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 5.3A TO252 |
8,622 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4.5V @ 250µA | 14nC @ 10V | ±30V | 670pF @ 25V | - | 104W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N CH 100V 6.5A TO252 |
2,916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Ta), 31A (Tc) | 4.5V, 10V | 24mOhm @ 20A, 10V | 2.7V @ 250µA | 25nC @ 10V | ±20V | 1190pF @ 15V | - | 2.5W (Ta), 53.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 80A SO8FL |
5,382 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.4A (Ta) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 4.5V | ±20V | 2300pF @ 15V | - | 780mW (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
CONSUMER |
2,808 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-342 | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 16.4A 52A 5DFN |
3,186 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 5.8mOhm @ 18A, 10V | 2.1V @ 250µA | 18.2nC @ 10V | ±20V | 1670pF @ 15V | - | 2.51W (Ta), 25.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Texas Instruments |
MOSFET P-CH 20V 4A 9DSBGA |
3,436 |
|
NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 26mOhm @ 2A, 4.5V | 1.05V @ 250µA | 7.5nC @ 4.5V | -6V | 1010pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA | 9-UFBGA, DSBGA |
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Nexperia |
MOSFET N-CH 80V 39A LFPAK |
3,672 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 39A (Tc) | 10V | 25mOhm @ 10A, 10V | 4V @ 1mA | 25.9nC @ 10V | ±20V | 1800pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Rohm Semiconductor |
MOSFET P-CH 30V 5A TSMT8 |
4,968 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 31mOhm @ 5A, 10V | 2.5V @ 1mA | 28nC @ 10V | ±20V | 1300pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |