內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 622/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 576M PARALLEL 168BGA |
3,490 |
|
- | Volatile | DRAM | DRAM | 576Mb (32M x 18) | Parallel | 933MHz | - | 8ns | 1.28V ~ 1.42V | -40°C ~ 85°C (TA) | Surface Mount | 168-LBGA | 168-FC(LF)BGA (13.5x13.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 576M PARALLEL 168BGA |
5,724 |
|
- | Volatile | DRAM | DRAM | 576Mb (16M x 36) | Parallel | 933MHz | - | 8ns | 1.28V ~ 1.42V | -40°C ~ 85°C (TA) | Surface Mount | 168-LBGA | 168-FC(LF)BGA (13.5x13.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 576M PARALLEL 168BGA |
6,606 |
|
- | Volatile | DRAM | DRAM | 576Mb (32M x 18) | Parallel | 1.066GHz | - | 10ns | 1.28V ~ 1.42V | -40°C ~ 85°C (TA) | Surface Mount | 168-LBGA | 168-FC(LF)BGA (13.5x13.5) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 576M PARALLEL 168BGA |
4,986 |
|
- | Volatile | DRAM | DRAM | 576Mb (16M x 36) | Parallel | 1.066GHz | - | 10ns | 1.28V ~ 1.42V | -40°C ~ 85°C (TA) | Surface Mount | 168-LBGA | 168-FC(LF)BGA (13.5x13.5) |
|
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|
Micron Technology Inc. |
IC FLASH 2T PARALLEL 132VBGA |
8,874 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 2Tb (256G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | - | - |
|
|
|
Micron Technology Inc. |
IC FLASH 2T PARALLEL 132VBGA |
3,924 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 2Tb (256G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | - | - |
|
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|
Maxim Integrated |
IC NVSRAM 4M PARALLEL 32EDIP |
4,626 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (512K x 8) | Parallel | - | 150ns | 150ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Through Hole | 32-DIP Module (0.600", 15.24mm) | 32-EDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 2M PARALLEL 256CABGA |
3,150 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 2Mb (128K x 18) | Parallel | 166MHz | - | 3.6ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 2M PARALLEL 256CABGA |
7,398 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 2Mb (64K x 36) | Parallel | 166MHz | - | 3.6ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 2M PARALLEL 208CABGA |
8,226 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 2Mb (64K x 36) | Parallel | 166MHz | - | 3.6ns | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 68PGA |
8,442 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 256Kb (32K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
3,762 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 6ns | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
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IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 208CABGA |
8,712 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 1.125Mb (32K x 36) | Parallel | - | 12ns | 12ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
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IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
6,822 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 1.125Mb (32K x 36) | Parallel | - | 12ns | 12ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 208CABGA |
4,086 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
|
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IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 208CABGA |
5,598 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
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IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 208CABGA |
7,524 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
|
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IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
5,220 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
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IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
2,574 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
8,352 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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IDT, Integrated Device Technology |
IC SRAM 1.125M PARALLEL 256CABGA |
7,848 |
|
- | Volatile | SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 4.2ns | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
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|
Micron Technology Inc. |
IC FLASH 512G MMC 169LFBGA |
7,668 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 169-LFBGA | 169-LFBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 512G MMC |
3,561 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 169-LFBGA | 169-LFBGA (14x18) |
|
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|
Micron Technology Inc. |
IC FLASH 512G MMC |
8,392 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 512G MMC |
7,020 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 169-LFBGA | 169-LFBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 512G MMC |
2,502 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
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Micron Technology Inc. |
IC FLASH 512G MMC |
6,033 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 169-LFBGA | 169-LFBGA (14x18) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 84PGA |
3,490 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 256Kb (16K x 16) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 84PGA |
6,300 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 256Kb (16K x 16) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 68PGA |
5,706 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 256Kb (32K x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |