內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 490/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
2,772 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (256K x 18) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA |
6,192 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (128M x 8) | Parallel | 933MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA |
5,328 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
8,352 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
4,716 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 200MHZ |
5,364 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TFBGA | 165-TFBGA (13x15) |
|
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|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
6,102 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
6,660 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
2,250 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 120ns | 1.65V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
5,832 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 120ns | 1.65V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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|
Micron Technology Inc. |
IC FLASH 1G PARALLEL 56TSOP |
6,804 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8, 64M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Micron Technology Inc. |
IC FLASH 1G PARALLEL 56TSOP |
6,804 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8, 64M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
6,696 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 100MHz | - | 5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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|
IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
5,148 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
6,138 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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|
IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
3,186 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
3,562 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
6,516 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 183MHz | - | 3.3ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
8,946 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 183MHz | - | 3.3ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
8,406 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
4,932 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
7,488 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
5,868 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL |
2,952 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 120ns | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL |
3,508 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 120ns | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL |
3,978 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 130ns | 1.65V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL |
2,682 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 130ns | 1.65V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL TSOP |
6,516 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
5,706 |
|
- | Volatile | DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
3,312 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |